| PART |
Description |
Maker |
| TLP1001A E006217 PLP1000A PLP1001A P1001A P100A TL |
THSHIBA PHOTOINTERRUPTER INFRARED LED PHOTO IC THSHIBA光电断路器红外LED相机芯片
From old datasheet system
TOSHIBA PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TLP1253C6 |
PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
TOSHIBA
|
| TLP831 |
PHOTO-INTERRUPTER INFRARED LED PHOTOTRANSISTOR
PHOTOINTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
Toshiba Semiconductor
|
| TLP1033A |
TOSHIBA Photointerrupter Infrared LED + Photo IC
|
TOSHIBA[Toshiba Semiconductor]
|
| IR333-H0-L10 IR333/H0/L10 |
5 mm, 1 ELEMENT, INFRARED LED, 940 nm
5mm Infrared LED , T-1 3/4
|
EVERLIGHT ELECTRONICS CO LTD
Everlight Electronics Co., Ltd
|
| SID1010M SID1K10CXM SID1010CM SID1010CXM SID1K10CM |
5PHI ROUND INFRARED LED
Infrared LED Lamp
|
SANKEN[Sanken electric]
|
| IR17-21C-TR8 IR17-21C_TR8 IR17-21C/TR8 |
1.4 mm, 1 ELEMENT, INFRARED LED, 940 nm
Infrared Chip LED
|
EVERLIGHT ELECTRONICS CO LTD
Everlight Electronics Co., Ltd
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| NTE30001 |
2.5 mm, 1 ELEMENT, INFRARED LED, 950 nm
Infrared Emitting Diode Bi.Directional
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| LN59L |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
|
